ABOUT US
NovaWave is a provider of innovative solutions for next-generation wide- bandgap power devices. We offer advanced GaN and SiC power devices with a large portfolio of products, such as Driver ICs, GaN power switches, GaN Schottky Diodes, and SiC SBDs.
NovaWave was founded in 2021 by a team of experts in power electronics with different industrial and academic backgrounds. Our headquarter is in Switzerland and we have offices in Taiwan and Hong Kong to provide optimal customer support.
Our products have broad application prospects in consumer electronics, wireless charging, data centers, 5G communications, lidars, and electric vehicles. We are power device experts, chip designers, packaging specialists, application and marketing professionals.
Our mission, enable a green and smarter future!
History
2023 – NovaWave’s offices in Taiwan and Hong Kong are established to increase our market penetration and proved optimal customer support.
2022 – NovaWave’s office in Biel is established and quickly attracts the best talents in GaN power devices and driver ICs becoming our core R&D center
2021 – Novawave’s is founded by a team of experts in power electronics with different industrial and academic backgrounds
2018 – Our team member develops 1.2 kV isolated power device drive chip
2017 – Our team members demonstrate the world’s first 650V gallium nitride Schottky diode with unprecedented on- and off-sate performance
2016 – Our team member files a PCT patent application for GaN Schotty Diodes and Multi-Channel Technology
2010 – Our team members begin to investigate silicon-based GaN epitaxy and GaN power devices