NovaWave Shines at PCIM Europe 2024, Demonstrating Innovative Strength in Power Electronics!
From June 11 to 13, 2024, NovaWave, a company with excellent performance in the field of power electronics, is honored to participate in the three-day PCIM Europe 2024 exhibition, showcasing our cutting-edge technology and innovative products to the world at booth 6-210. The global power electronics industry converged on Nuremberg, Germany, for this exhibition. As a top-tier exhibition and conference for the industry, PCIM Europe gathers numerous leading experts and industry-leading companies. NovaWave's participation in this exhibition not only showcased the company's technological strength and brand influence but also enabled in-depth exchanges and cooperation with global peers. At booth 6-210, …
NovaWave’s headquarter inaugurated in Switzerland
NovaWave’s headquarter has been inaugurated in Biel, Switzerland, in the beautiful Swiss Innovation Park. This office represents the core R&D and design center of NovaWave. The team here is responsible for the entire technology development, from the initial device design to the full commercial release of new product lines. Its aim is to attract the best talents in GaN devices and power electronics. Our team is highly international and mostly at senior and principal levels. The location is highly strategic being in the center of Switzerland and Europe. It also helps that it is very close to the beautiful lake …
Important Technological Breakthrough by Dr. Nela and Dr. Erine
Recently, a research paper entitled "Multi-channel nanowire devices for efficient power conversion" was published in Nature Electronics by our team members. The paper reported on new power devices based on multi-channel technology and wide-band semiconductor gallium nitride (GaN). This technology is a major advance in power electronics and wide-band semiconductors, which is expected to improve energy conversion efficiency significantly. Fig.1 Structural schematics and SEM images of multi-channel devices. Fig.2 The effect of multi-channel on the breakdown voltage of the device and the increase of the breakdown voltage caused by the oblique three-dimensional gate. Fig.3 Comparison of the performance of new devices …