
650 V-1200 V, 5 A – 40 A, 20 mOhm – 80 mOhm
SiC Schottky Barrier Diodes and MOSFETs for industrial and mobility applications
Part Number | Family | VDS (V) | RDS,ON (typ.) (mΩ) | Package | Datasheet |
---|---|---|---|---|---|
NWSG0701ELA1 | Smart-GaNTM | 650 | 70 | QFN8x8 | Coming Soon |
NWSG1201EQA1 | Smart-GaNTM | 650 | 120 | QFN6x8 | Coming Soon |
NWSG1601EQA1 | Smart-GaNTM | 650 | 165 | QFN6x8 | Coming Soon |
Part Number | Family | VDS (V) | IF(A) | Package | Datasheet |
---|---|---|---|---|---|
NW6502RD1 | GaN SBD | 650 | 2 | DFN | Contact us |
NW6504RZ1 | GaN SBD | 650 | 4 | TO220 | Contact us |
NW6508RZ1 | GaN SBD | 650 | 8 | TO220 | Contact us |
Part Number | Family | VDS (V) | RDS,ON (typ.) (mΩ) | Package | Datasheet |
---|---|---|---|---|---|
NW6506CL1 | SiC MOSFETs | 650 | 60 | TOLL | ![]() |
NW6506CJ1 | SiC MOSFETs | 650 | 60 | TO247 | ![]() |
NW12008CJ1 | SiC MOSFETs | 1200 | 80 | TO247 | ![]() |