Smart-DriverTM
Gallium Nitride (GaN) power devices offer unique potential to achieve lower switching losses, higher energy efficiency, and superior power density than conventional silicon-based devices. As true for every power device, adequate gate driving is key to fully utilizing its intrinsic capabilities. Yet, GaN high switching speed, fragile gate stack, and relatively low threshold voltage require dedicated and optimized driving solutions…
Smart-GaNTM
Gallium Nitride (GaN) power devices switch faster and are more efficient than conventional silicon-based devices. This enables a new generation of power conversion solutions with reduced size, weight, and environmental impact…
Flash-SBDsTM
The material properties of Silicon restrict the use of unipolar (or Schottky) diodes to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. For higher voltages, p-i-n junctions are employed, which however results in large reverse-recovery behavior and thus are limited to low switching frequencies. Thanks to the superior properties of wide-bandgap semiconductors, SiC Schottky diodes can reach a much higher breakdown voltage with low reverse recovery charge and on-resistance…
GaN-on-QST
GaN epitaxial growth is a key step of the GaN power technology. Currently, GaN-on-Si and GaN-on-Si are the most common platforms in the industry, both presenting advantages and drawbacks. GaN-on-sapphire comes from long-term experience in LED and offers a cost-effective solution with a relatively simple buffer structure….
SiC SBDs
Silicon Carbide (SiC) is proving to be a game-changer in power electronics for a large variety of applications. As material, SiC, offers several advantages compared to Silicon, enabling drastically improved efficiency, speed, and reliability in power systems….