Silicon Carbide (SiC) is proving to be a game-changer in power electronics for a large variety of applications. As material, SiC, offers several advantages compared to Silicon, enabling drastically improved efficiency, speed, and reliability in power systems.
One of the standout features of SiC is its remarkable ability to operate at higher temperatures compared to traditional silicon-based counterparts. NovaWave’s SiC Schottky Barrier Diodes (SBDs) take full advantage of this characteristic, ensuring optimal performance and reliability even in challenging thermal environments. The higher thermal conductivity of SiC not only allows for efficient heat dissipation but also translates into systems that can handle increased power loads.
Moreover, SiC exhibits significantly lower conduction losses and faster switching speeds, enabling power electronics to operate with enhanced efficiency. The absence of reverse recovery charge allows operation at high switching frequency, paving the way for new applications and topologies. Reduced power losses mean that devices can perform their functions more effectively, improving the efficiency of the overall system.
NovaWave SiC SBDs embrace these advantages to offer efficient solutions for a wide variety of applications including renewable energy, industrial, and mobility.
High-Temperature Stability
Our SiC devices can operate across a wide temperature range, making them adaptable to various applications.
High-Efficiency
Thanks to the wider bandgap compared to silicon and the absence of reverse recovery, SiC devices achieve reduced conduction and switching losses, resulting in more efficient power conversion
Fast-Switching
SiC devices exhibit faster switching speeds compared to traditional silicon devices and no reverse recovery charge. These properties minimize switching losses and enable high-frequency operation.