ABOUT US
NovaWave is a provider of innovative solutions for next-generation wide-bandgap power devices. We specialize in advanced GaN and driving technologies, offering a comprehensive portfolio that includes driver ICs, GaN power switches, and complete system-in-package (SiP) solutions.
Founded in 2021 by a team of experts in power electronics from diverse industrial and academic backgrounds, NovaWave is headquartered in Switzerland, with an office in Shenzhen to ensure responsive global customer support.
Our products serve a wide range of high-growth applications, including consumer electronics, wireless charging, AI and data centers, robotics, and industrial applications.
At NovaWave, we bring together deep expertise in power devices, chip design, advanced packaging, and application engineering.
Our mission: to enable a greener and smarter future.
History
2025 – Novawave’s E-mode driver is released and D-mode GaN technology is qualified
2024 – Novawave completes qualification for its E-mode GaN technology
2022 – NovaWave’s office in Biel is established and quickly attracts the best talents in GaN power devices and driver ICs becoming our core R&D center
2021 – NovaWave’s office in Shenzhen is established to increase our market penetration and proved optimal customer support.
2021 – Novawave is founded by a team of experts in power electronics with different industrial and academic backgrounds
2018 – Our team member develops 1.2 kV isolated power device drive chip
2017 – Our team members demonstrate the world’s first 650V gallium nitride Schottky diode with unprecedented on- and off-sate performance
2016 – Our team member files a PCT patent application for GaN Schotty Diodes and Multi-Channel Technology
2010 – Our team members begin to investigate silicon-based GaN epitaxy and GaN power devices