NovaWave to Showcase Cutting-Edge GaN Solutions at PCIM Europe 2026 in Nuremberg, Germany
NovaWave is thrilled to announce its participation in PCIM Europe 2026 – Europes’s leading trade fair for power electronics, taking place from June 9 to 11, 2026, in Nuremberg, Germany. We invite global industry partners to visit our booth and join our technical presentations to explore the next generation of wide-bandgap power device solutions. About NovaWaveNovaWave is a provider of innovative solutions for next-generation wide-bandgap power devices, specializing in advanced GaN and driving technologies. Our comprehensive portfolio includes driver ICs, GaN power switches, and complete system-in-package (SiP) solutions, tailored to meet the evolving needs of high-growth applications including consumer electronics, …
NovaWave Chooses DB HiTek as Foundry Partner for E-Mode GaN Power Device Manufacturing
NovaWave, a Swiss developer of advanced power semiconductor solutions, today announced that it has selected DB HiTek, a Korean semiconductor foundry specializing in analog and power manufacturing, as its foundry for the fabrication of E-mode Gallium Nitride (GaN) power devices. Under this engagement, DB HiTek will provide wafer manufacturing services leveraging its long track record in analog and power semiconductor manufacturing, utilizing established process platforms with an emphasis on stable process control, manufacturing scalability, and consistent fabrication quality. NovaWave is targeting high-efficiency GaN power solutions intended to address evolving performance and energy-efficiency requirements across a range of end applications, including …
NovaWave Shines at PCIM Europe 2024
Nuremberg, Germany – June 11-13, 2024 We were thrilled to participate in PCIM Europe 2024, showcasing our latest technologies and products at booth 6-210. PCIM Europe is a key event in the power electronics industry, bringing together experts and top companies from around the world. At our booth, we displayed a variety of cutting-edge technologies, including 650V gallium nitride (GaN) power devices, smart power driver IC chips, innovative GaN SBDs, and silicon carbide (SiC) power devices. These products offer a complete portfolio to our customers and demonstrate our commitment to innovation. Among the key product launches, we announced that our …
NovaWave’s headquarter inaugurated in Switzerland
NovaWave’s headquarter has been inaugurated in Biel, Switzerland, in the beautiful Swiss Innovation Park. This office represents the core R&D and design center of NovaWave. The team here is responsible for the entire technology development, from the initial device design to the full commercial release of new product lines. Its aim is to attract the best talents in GaN devices and power electronics. Our team is highly international and mostly at senior and principal levels. The location is highly strategic being in the center of Switzerland and Europe. It also helps that it is very close to the beautiful lake …
Important Technological Breakthrough by Dr. Nela and Dr. Erine
Recently, a research paper entitled "Multi-channel nanowire devices for efficient power conversion" was published in Nature Electronics by our team members. The paper reported on new power devices based on multi-channel technology and wide-band semiconductor gallium nitride (GaN). This technology is a major advance in power electronics and wide-band semiconductors, which is expected to improve energy conversion efficiency significantly. Fig.1 Structural schematics and SEM images of multi-channel devices. Fig.2 The effect of multi-channel on the breakdown voltage of the device and the increase of the breakdown voltage caused by the oblique three-dimensional gate. Fig.3 Comparison of the performance of new devices …